Curriculum Vitae

Yongfu ZHU
Institute of Multidisciplinary Research for Advanced Materials (IMRAM)
Tohoku University
2-1-1, Katahira, Aoba-ku, Sendai 980-8577
Japan
Phone:  +81-22-217-5139 (Lab.)  Fax:  +81-22-217-5139 (Lab.)
E-mail: yfzhu@iamp.tohoku.ac.jp


?PERSONAL DETAILS
Gender: male 
Date of Birth: 5th July, 1970
Nationality: People¡¯s Republic of China
Marital status: married      
Place of Birth: Jiangsu Province, China
Health: Excellent


? EDUCATION BACKGROUND
Oct. 1999¡ª Present     Ph.D. student (Division of Materials Design) 
                     Institute of Multidisciplinary Research for Advanced Materials
                     Tohoku University, Japan.
                     
Sept. 1995¡ª June 1999  M.S degree (Laboratory of Liquid Crystal) 
                     Changchun Institute of Optics, Fine Mechanics and Physics
                     Chinese Academy of Sciences, China.

Sept. 1991¡ªJune 1995  B.S. degree, (Department of Electronic Engineering)
¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡ Jilin University, China.


? FOREIGN LANGUAGE PROFICIENCY
 English: Read and write fast, excellent for writing and speaking.
Japanese: Read fast, excellent for writing and speaking.




? RESEARCH EXPERIENCE
A. For the Doctor Course
Study on the oxidation mechanism of copper at 350-1050¡æ and the purity effect.
1 Preparation of high purity copper with floating zone refining method.

2 Oxidation mechanism of ultra-high purity copper.

3 Effect of trace or small amounts of impurities on copper oxidation.

4 Oxidation mechanism of Cu2O to CuO.

B. For the Master Course
Study on the preparation of a-Si:H active matrix liquid crystal display (AM LCD):
1  I-V asymmetry improvement of MIM devices.

2  The performance improvement of a-Si TFT by optimizing the deposition conditions of a-SiNx:H and s-Si:H and H plasma treatment on the back channel of a-Si TFT.

3  Simulation of the voltage skip on the pixel for 10.3" VGA a-Si TFT LCD by considering the channel capacitance and the change of LC capacitance.

C. For the bachelor course 
Study on the Y2O3 stabilized ZrO2 film deposited with the method of electrophoresis deposition for solid oxide fuel cell 


? PUBLICATIONS 
Journal papers
1 Yongfu Zhu, Muju Li, Jianfeng Yuan, Chuanzhen Liu, Bailiang Yang, and Dezhen Shen, ¡°Simulation of Pixel Voltage Error for a-Si TFT LCD Regarding the Change in LC Pixel Capacitance,¡± IEEE Trans. ED, 48 (2001) 218-221. 
2 Yongfu Zhu, Kouji Mimura, Yukio Mimura, and Mironu Isshiki, ¡°High Temperature Oxidation of High-purity Copper,¡± Journal of the JCBRA, 40 (2001), 96-100.
3 Yongfu Zhu, Kouji Mimura, and Mironu Isshiki, ¡°Oxidation mechanism of copper at 632-1073K,¡± Mater. Trans. JIM, accepted.
4 Yongfu Zhu, Kouji Mimura, Yukio Mimura, and Mironu Isshiki, ¡°Effect of Floating Zone Refining under Reduced Hydrogen Pressure on Copper Purification,¡± Mater. Trans. JIM, accepted.
5 Yongfu Zhu, Kouji Mimura, and Mironu Isshiki, ¡°Activation Energies for Copper Oxidation Governed by Lattice Diffusion,¡± J. Electrochem. Soc., submitted.
6 Yongfu Zhu, Kouji Mimura, and Mironu Isshiki, ¡°Effect of Small amounts of Impurities on copper oxidation at 350-1050¡æ,¡± Oxidation of Metals, submitted.
7 Yongfu Zhu, Kouji Mimura, and Mironu Isshiki, ¡°Oxidation of Cu2O to CuO at 600-1050¡æ,¡± in consideration.
8 Yongfu Zhu, Muju Li, Bailiang Yang, Chuanzhen Liu, Yanping Liao, Jianfeng Yuan, and Dezhen shen, ¡°Effect of PECVD Deposition Condition on H Radicals in a-SiNx:H¡±, Chinese Journal of Liquid Crystals, 7 (1999) 144-146.
9 HongWu Liu, Yuan Wu, Yongfu Zhu, and Ximin Huang, ¡°Effect of Top Electrode on I-V asymmetry for MIM Devices,¡± Journal of Natural Science of Jilin University, 32 (1997) 38-40.
10 HongWu Liu, Yuan Wu, Yongfu Zhu, and Ximin Huang, ¡°Effect of Hydrogen Heat-treatment to Surface of Insulator on I-V characteristics of MIM¡±, Journal of Natural Science of Jilin University, 33 (1998) 99-102.
11 Muju Li, Bailiang Yang, and Yongfu Zhu, ¡°Simulation of Gate Retard of Circuits for TFT AMLCD,¡± Chinese Journal of Liquid Crystals, 7 (1999) 35-38.
12 Jianfeng Yuan, Muju Li, Yongfu Zhu, and Bailiang Yang, ¡°Prepartion of High-performance a-Si:H TFT Devices,¡± Chinese Journal of Liquid Crystals, 7 (1999) 123-128. 
13 Cuanzhen Liu, Bailiang Yang, Yongfu Zhu, Jianfeng Yuan, and Muju Li, ¡°Si-TFT Active Matrix LCD,¡± Chinese Journal of Liquid Crystals, 7 (1999), 39-42. 

International Conference Papers
14 Yongfu Zhu, Zhensheng Chu, Bailiang Yang, and Ximing Huang, ¡°Effects of Hydrogen Radical Treatment on Performance of Silicon Nitride Passivated a-Si:H TFT, Proceeding of the Fourth International Display Workshops, IDW¡¯97 (Nagoya, 1997), 211-213.
15 Y.Zhu, Z.Chu, H.Liu, and X.Huang, ¡°High Performance Inverted Staggered a-Si TFT Obtained by Using Hydrogen Treatment¡±, Proceeding of 1997 International Semiconductor Devices Research Symposium, ISDRS¡¯97 (Charlottesville, 1997), 455-458.
16 Yongfu Zhu, and Ximin Huang, ¡°I-V Asymmetry Improvement of MIM Devices Utilizing Anodic Ta2O5 as Insulator Layer Formed in NH3?H2O,¡± Proceeding of the 7th ASIA PACIFIC PHYSICS CONFERENCE, APPC¡¯97 (Beijing, 1997), 324-328.
17 T. Kekesi, M. Uchikoshi, K. Mimura, Y. Zhu, and M. Isshki, ¡°ULTRA-HIGH PURIFICATION OF TRANSITION METALS BY ANION EXCHANGE APPLYING VARIOUS OXIDATION STATES,¡± Proc. Second Int. Conf. On Processing Material for Properties, PMP2000 (TMS, San Fransisco, 2000) 979-984.
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